TCAD Calibration and Simulation of Mosfet Device

Abstract

This paper presents the calibration of Technology Computer Aided Design (TCAD) device simulator for MOSFET device and validation of this calibrated deck. MOSFET device with 350 nm gate length is actualized using SCLs process flow and compared with experimental data using specific calibration methodology. We have obtained a physically significant match with the measurement data by manipulating physical models as a fitting parameter. Thus, the same set of model parameters is anticipated to be convenient, even once ever – changing to the more device generations. We have confirmed it by comparing measurement and simulation data for 2D RESURF LDMOS device with same calibrated deck.