Abstract:
This paper presents the calibration of Technology Computer Aided
Design (TCAD) device simulator for MOSFET device and validation
of this calibrated deck. MOSFET device with 350 nm gate length is
actualized using SCLs process flow and compared with experimental
data using specific calibration methodology. We have obtained a
physically significant match with the measurement data by manipulating
physical models as a fitting parameter. Thus, the same set of model
parameters is anticipated to be convenient, even once ever – changing
to the more device generations. We have confirmed it by comparing
measurement and simulation data for 2D RESURF LDMOS device
with same calibrated deck.
